MBT3904DW1T1G
- Manufacturer ON Semiconductor
- Part Number MBT3904DW1T1G
- Description Bipolar Transistors - BJT 200mA 60V Dual NPN
- Category Bipolar Transistors - BJT
Specifications
| Package | SC-70-6 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 6 V |
| Width | 1.25 mm |
| Part # Aliases | MBT3904DW1T3G |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - BJT |
| Brand | ON Semiconductor |
| Unit Weight | 0.000988 oz |
| Collector- Emitter Voltage VCEO Max | - 35 V |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 300 MHz |
| Length | 2 mm |
| Maximum DC Collector Current | 0.2 A |
| RoHS | Y |
| Continuous Collector Current | - 2 A |
| Collector-Emitter Saturation Voltage | 0.3 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | MBT3904DW1 |
| Height | 0.9 mm |
| Packaging | |
| Collector- Base Voltage VCBO | - 55 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 625 mW |
| DC Collector/Base Gain hfe Min | 40 |
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