KTC3198-GR A1G
- Manufacturer Taiwan Semiconductor
- Part Number KTC3198-GR A1G
- Description Bipolar Transistors - BJT NPN Transistor Hfe 200-400
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-92-3 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 5 V |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | Taiwan Semiconductor |
| DC Current Gain hFE Max | 400 |
| Unit Weight | |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 80 MHz |
| Maximum DC Collector Current | 0.15 A |
| RoHS | Y |
| Continuous Collector Current | 0.15 A |
| Collector-Emitter Saturation Voltage | 0.25 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Mounting Style | Through Hole |
| Collector- Base Voltage VCBO | 60 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 500 mW |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 200 |
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