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KSP06BU

  • Manufacturer ON Semiconductor / Fairchild
  • Part Number KSP06BU
  • Description Bipolar Transistors - BJT NPN Si Transistor Epitaxial
  • Category Bipolar Transistors - BJT
Specifications
Package TO-92-3
Packaging Bulk
Min. Pack 1
Transistor Polarity NPN
Emitter- Base Voltage VEBO 4 V
Width 3.93 mm
Part # Aliases KSP06BU_NL
Product Category Bipolar Transistors - BJT
Brand ON Semiconductor / Fairchild
Unit Weight 0.006314 oz
Collector- Emitter Voltage VCEO Max 80 V
Configuration Single
Maximum Operating Temperature + 150 C
Gain Bandwidth Product fT 100 MHz
Length 4.7 mm
Maximum DC Collector Current 0.5 A
RoHS Y
Continuous Collector Current 0.5 A
Collector-Emitter Saturation Voltage 0.25 V
Product Type BJTs - Bipolar Transistors
Subcategory Transistors
Series KSP06
Height 4.7 mm
Mounting Style Through Hole
Collector- Base Voltage VCBO 80 V
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 625 mW
Technology Si
DC Collector/Base Gain hfe Min 50

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