KSD363RTU
- Manufacturer ON Semiconductor / Fairchild
- Part Number KSD363RTU
- Description Bipolar Transistors - BJT NPN Epitaxial Sil
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-220-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 8 V |
| Width | 4.7 mm |
| Mounting Style | Through Hole |
| Product Category | Bipolar Transistors - BJT |
| DC Collector/Base Gain hfe Min | 40 |
| Unit Weight | 0.063493 oz |
| Collector- Emitter Voltage VCEO Max | 120 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 10 MHz |
| Length | 10.1 mm |
| Maximum DC Collector Current | 6 A |
| RoHS | Y |
| Collector-Emitter Saturation Voltage | 1 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | KSD363 |
| Height | 9.4 mm |
| Collector- Base Voltage VCBO | 300 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 40000 mW |
| Brand | ON Semiconductor / Fairchild |
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