KSD2012GTU
- Manufacturer ON Semiconductor / Fairchild
- Part Number KSD2012GTU
- Description Bipolar Transistors - BJT NPN Si Transistor Epitaxial
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-220F-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 7 V |
| Width | 4.7 mm |
| Mounting Style | Through Hole |
| Product Category | Bipolar Transistors - BJT |
| Brand | ON Semiconductor / Fairchild |
| DC Current Gain hFE Max | 320 |
| Unit Weight | 0.080072 oz |
| Collector- Emitter Voltage VCEO Max | 60 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 3 MHz |
| Length | 10.16 mm |
| Maximum DC Collector Current | 3 A |
| RoHS | Y |
| Continuous Collector Current | 3 A |
| Collector-Emitter Saturation Voltage | 0.4 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | KSD2012 |
| Height | 9.19 mm |
| Collector- Base Voltage VCBO | 60 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 25 W |
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