KSD1616AGBU
- Manufacturer ON Semiconductor / Fairchild
- Part Number KSD1616AGBU
- Description Bipolar Transistors - BJT NPN Epitaxial Sil
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-92-3 |
| Packaging | Bulk |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 6 V |
| Width | 3.93 mm |
| Part # Aliases | KSD1616AGBU_NL |
| Mounting Style | Through Hole |
| Product Category | Bipolar Transistors - BJT |
| Brand | ON Semiconductor / Fairchild |
| DC Current Gain hFE Max | 600 |
| Unit Weight | 0.006314 oz |
| Collector- Emitter Voltage VCEO Max | 60 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Length | 4.7 mm |
| Maximum DC Collector Current | 1 A |
| RoHS | Y |
| Continuous Collector Current | 1 A |
| Gain Bandwidth Product fT | 160 MHz |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | KSD1616A |
| Height | 4.7 mm |
| Collector- Base Voltage VCBO | 120 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 750 mW |
| DC Collector/Base Gain hfe Min | 135 |
Need pricing on KSD1616AGBU?
Tell us your quantity and target price. We reply the same business day.