KSC5502DTM
- Manufacturer ON Semiconductor / Fairchild
- Part Number KSC5502DTM
- Description Bipolar Transistors - BJT NPN Triple Diffused Planar Silicon
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-252-3 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 12 V |
| Width | 6.1 mm |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - BJT |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.009184 oz |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 11 MHz |
| Length | 6.6 mm |
| Maximum DC Collector Current | 2 A |
| RoHS | E |
| Continuous Collector Current | 2 A |
| Collector-Emitter Saturation Voltage | 0.31 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | KSC5502D |
| Height | 2.3 mm |
| Packaging | |
| Collector- Base Voltage VCBO | 1.2 kV |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 75 W |
| DC Collector/Base Gain hfe Min | 14 |
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