Jantxv2N3810/TR
- Manufacturer Microchip / Microsemi
- Part Number Jantxv2N3810/TR
- Description Bipolar Transistors - BJT
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-78-6 |
| Min. Pack | 100 |
| Emitter- Base Voltage VEBO | 5 V |
| Collector-Emitter Saturation Voltage | 0.2 V |
| Product Category | Bipolar Transistors - BJT |
| Transistor Polarity | PNP |
| Subcategory | Transistors |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 200 C |
| Brand | Microchip / Microsemi |
| Maximum DC Collector Current | 50 mA |
| DC Current Gain hFE Max | 450 at 100 uA, 5 V |
| Collector- Emitter Voltage VCEO Max | 60 V |
| Pd - Power Dissipation | 350 mW |
| Mounting Style | Through Hole |
| Collector- Base Voltage VCBO | 60 V |
| Minimum Operating Temperature | - 65 C |
| Configuration | Dual |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 100 at 10 uA, 5 V |
| RoHS | N |
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