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Jantx2N6989/TR

  • Manufacturer Microchip / Microsemi
  • Part Number Jantx2N6989/TR
  • Description Bipolar Transistors - BJT
  • Category Bipolar Transistors - BJT
Specifications
Package TO-116-14
Min. Pack 100
Emitter- Base Voltage VEBO 6 V
Collector-Emitter Saturation Voltage 0.3 V
Product Category Bipolar Transistors - BJT
Transistor Polarity NPN
Subcategory Transistors
Product Type BJTs - Bipolar Transistors
Maximum Operating Temperature + 200 C
Brand Microchip / Microsemi
Maximum DC Collector Current 800 mA
DC Current Gain hFE Max 325 at 1 mA, 10 V
Collector- Emitter Voltage VCEO Max 50 V
Pd - Power Dissipation 1.5 W
Mounting Style Through Hole
Collector- Base Voltage VCBO 75 V
Minimum Operating Temperature - 65 C
Configuration Quad
Technology Si
DC Collector/Base Gain hfe Min 30 at 500 mA, 10 V
RoHS N

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