JANTX2N5153
- Manufacturer Microchip / Microsemi
- Part Number JANTX2N5153
- Description Bipolar Transistors - BJT Power BJT
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-39-3 |
| Packaging | Bulk |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | 5.5 V |
| Mounting Style | Through Hole |
| Product Category | Bipolar Transistors - BJT |
| Brand | Microchip / Microsemi |
| DC Current Gain hFE Max | 200 at 2.5 A, 5 VDC |
| Collector- Emitter Voltage VCEO Max | 80 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 200 C |
| Maximum DC Collector Current | 2 A |
| RoHS | N |
| Collector-Emitter Saturation Voltage | 750 mV |
| Configuration | Single |
| Subcategory | Transistors |
| Collector- Base Voltage VCBO | 100 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 1 W |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 70 at 2.5 A, 5 VDC |
Need pricing on JANTX2N5153?
Tell us your quantity and target price. We reply the same business day.