JANTX2N4261/TR
- Manufacturer Microchip / Microsemi
- Part Number JANTX2N4261/TR
- Description Bipolar Transistors - BJT
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-72-3 |
| Min. Pack | 100 |
| Emitter- Base Voltage VEBO | - 4.5 V |
| Collector-Emitter Saturation Voltage | - 0.15 V |
| Product Category | Bipolar Transistors - BJT |
| Transistor Polarity | PNP |
| Subcategory | Transistors |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 200 C |
| Brand | Microchip / Microsemi |
| Maximum DC Collector Current | - 30 mA |
| DC Current Gain hFE Max | 150 at - 10 mA, - 1 V |
| Collector- Emitter Voltage VCEO Max | - 15 V |
| Pd - Power Dissipation | 200 mW |
| Mounting Style | Through Hole |
| Collector- Base Voltage VCBO | - 15 V |
| Minimum Operating Temperature | - 65 C |
| Configuration | Single |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 20 at - 30 mA, - 1 V |
| RoHS | N |
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