Jantx2N3057A/TR
- Manufacturer Microchip / Microsemi
- Part Number Jantx2N3057A/TR
- Description Bipolar Transistors - BJT BJTs
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-46-3 |
| Min. Pack | 100 |
| Emitter- Base Voltage VEBO | 7 V |
| Collector-Emitter Saturation Voltage | 0.5 V |
| Product Category | Bipolar Transistors - BJT |
| Transistor Polarity | NPN |
| Subcategory | Transistors |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 200 C |
| Brand | Microchip / Microsemi |
| Maximum DC Collector Current | 1 A |
| DC Current Gain hFE Max | 300 at 500 mA, 10 V |
| Collector- Emitter Voltage VCEO Max | 80 V |
| Pd - Power Dissipation | 500 mW |
| Mounting Style | Through Hole |
| Collector- Base Voltage VCBO | 140 V |
| Minimum Operating Temperature | - 65 C |
| Configuration | Single |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 15 at 1 A, 10 V |
| RoHS | N |
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