Jan2N3637/TR
- Manufacturer Microchip / Microsemi
- Part Number Jan2N3637/TR
- Description Bipolar Transistors - BJT
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-205AD-3 |
| Min. Pack | 100 |
| Emitter- Base Voltage VEBO | 5 V |
| Collector-Emitter Saturation Voltage | 0.3 V |
| Product Category | Bipolar Transistors - BJT |
| Transistor Polarity | PNP |
| Subcategory | Transistors |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 200 C |
| Brand | Microchip / Microsemi |
| Maximum DC Collector Current | 1 A |
| DC Current Gain hFE Max | 300 at - 50 mA, - 10 V |
| Collector- Emitter Voltage VCEO Max | 175 V |
| Pd - Power Dissipation | 5 W |
| Mounting Style | Through Hole |
| Collector- Base Voltage VCBO | 175 V |
| Minimum Operating Temperature | - 65 C |
| Configuration | Single |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 55 at 100 uA, 10 V |
| RoHS | N |
Need pricing on Jan2N3637/TR?
Tell us your quantity and target price. We reply the same business day.