Jan2N3500/TR
- Manufacturer Microchip / Microsemi
- Part Number Jan2N3500/TR
- Description Bipolar Transistors - BJT
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-39-3 |
| Min. Pack | 100 |
| Emitter- Base Voltage VEBO | 6 V |
| Collector-Emitter Saturation Voltage | 0.4 V |
| Product Category | Bipolar Transistors - BJT |
| Transistor Polarity | NPN |
| Subcategory | Transistors |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 200 C |
| Brand | Microchip / Microsemi |
| Maximum DC Collector Current | 300 mA |
| DC Current Gain hFE Max | 120 at 150 mA, 10 V |
| Collector- Emitter Voltage VCEO Max | 150 V |
| Pd - Power Dissipation | 1 W |
| Mounting Style | Through Hole |
| Collector- Base Voltage VCBO | 150 V |
| Minimum Operating Temperature | - 65 C |
| Configuration | Single |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 15 at 300 mA, 10 V |
| RoHS | N |
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