IXZR18N50
- Manufacturer IXYS
- Part Number IXZR18N50
- Description RF MOSFET Transistors 18A 500V N Channel ZMOS Switch MOSFET ISO Plus 247
- Category RF MOSFET Transistors
Specifications
| Package | TO-247-3 |
| Packaging | Tube |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Transistor Polarity | N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 4.6 V |
| Qg - Gate Charge | 42 nC |
| Type | RF Power MOSFET |
| Mounting Style | Through Hole |
| Product Category | RF MOSFET Transistors |
| Brand | IXYS |
| Number of Channels | 1 Channel |
| Product Type | RF MOSFET Transistors |
| Maximum Operating Temperature | + 175 C |
| Forward Transconductance - Min | 6.7 S |
| Id - Continuous Drain Current | 19 A |
| Output Power | 350 W |
| Rds On - Drain-Source Resistance | 370 mOhms |
| RoHS | Y |
| Subcategory | MOSFETs |
| Series | IXZR18 |
| Minimum Operating Temperature | - 55 C |
| Technology | Si |
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