IXZ2210N50L2
- Manufacturer IXYS
- Part Number IXZ2210N50L2
- Description RF MOSFET Transistors IXZ2210N50L2 10A 500V N Channel Dual ZMOS Linear MOSFET
- Category RF MOSFET Transistors
Specifications
| Package | SMD-8 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Transistor Polarity | Dual N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Type | RF Power MOSFET |
| Mounting Style | SMD/SMT |
| Product Category | RF MOSFET Transistors |
| Brand | IXYS |
| Number of Channels | 2 Channel |
| Product Type | RF MOSFET Transistors |
| Maximum Operating Temperature | + 150 C |
| Forward Transconductance - Min | 3.1 S |
| Id - Continuous Drain Current | 10 A |
| Output Power | 270 W |
| Rds On - Drain-Source Resistance | 1 Ohms |
| Operating Frequency | 2 MHz to 110 MHz |
| RoHS | Y |
| Subcategory | MOSFETs |
| Series | IXZ221 |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 270 W |
| Technology | Si |
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