IXXN110N65C4H1
- Manufacturer IXYS
- Part Number IXXN110N65C4H1
- Description IGBT Modules 650V/234A Trench IGBT GenX4 XPT
- Category IGBT Modules
Specifications
| Package | SOT-227B-4 |
| Packaging | Tube |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | 100 nA |
| Product | IGBT Silicon Modules |
| Product Category | IGBT Modules |
| Brand | IXYS |
| Unit Weight | 1.058219 oz |
| Collector- Emitter Voltage VCEO Max | 650 V |
| Tradename | XPT |
| Product Type | IGBT Modules |
| Maximum Operating Temperature | + 175 C |
| Continuous Collector Current at 25 C | 210 A |
| Maximum Gate Emitter Voltage | 20 V |
| RoHS | Y |
| Collector-Emitter Saturation Voltage | 1.98 V |
| Configuration | Single Dual Emitter |
| Subcategory | IGBTs |
| Series | IXXN110N65 |
| Mounting Style | SMD/SMT |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 750 W |
| Technology | Si |
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