IXTY8N70X2
- Manufacturer IXYS
- Part Number IXTY8N70X2
- Description MOSFET 700V/8A Ultra Junct X2-Class MOSFET
- Category MOSFET
Specifications
| Package | TO-252-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 700 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 12 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Fall Time | 24 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 0.011993 oz |
| Number of Channels | 1 Channel |
| Tradename | HiPerFET |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 4.8 S |
| Id - Continuous Drain Current | 8 A |
| Rds On - Drain-Source Resistance | 500 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 53 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | X2-Class |
| Typical Turn-On Delay Time | 24 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 150 W |
| Rise Time | 28 ns |
| Technology | Si |
Need pricing on IXTY8N70X2?
Tell us your quantity and target price. We reply the same business day.