IXTY26P10T
- Manufacturer IXYS
- Part Number IXTY26P10T
- Description MOSFET TrenchP Power MOSFET
- Category MOSFET
Specifications
| Package | TO-252-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 4.5 V |
| Width | 6.73 mm |
| Qg - Gate Charge | 52 nC |
| Vgs - Gate-Source Voltage | 15 V |
| Type | TrenchP Power MOSFET |
| Fall Time | 11 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 0.081130 oz |
| Tradename | TrenchP |
| Product Type | MOSFET |
| Maximum Operating Temperature | + 150 C |
| Forward Transconductance - Min | 10 S |
| Id - Continuous Drain Current | 26 A |
| Length | 6.22 mm |
| Rds On - Drain-Source Resistance | 90 mOhms |
| RoHS | Y |
| Typical Turn-Off Delay Time | 37 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | IXTY26P10 |
| Height | 2.38 mm |
| Typical Turn-On Delay Time | 20 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 150 W |
| Rise Time | 15 ns |
| Technology | Si |
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