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IXTY01N100-TRL

Specifications
Package TO-252-3
Min. Pack 1
Vds - Drain-Source Breakdown Voltage 1000 V
Transistor Polarity N-Channel
Vgs - Gate-Source Voltage 20 V
Vgs th - Gate-Source Threshold Voltage 2 V
Type High Voltage
Fall Time 28 ns
Mounting Style SMD/SMT
Product Power MOSFET Modules
Product Category Discrete Semiconductor Modules
Brand IXYS
Product Type Discrete Semiconductor Modules
Maximum Operating Temperature + 150 C
Id - Continuous Drain Current 100 mA
Rds On - Drain-Source Resistance 80 Ohms
RoHS Y
Configuration Single
Typical Turn-Off Delay Time 40 ns
Subcategory Discrete Semiconductor Modules
Packaging
Typical Turn-On Delay Time 12 ns
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 25 W
Rise Time 12 ns

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