IXTT6N120-TRL

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Specifications

Package	TO-268-3
Packaging	Reel
Min. Pack	400
Vds - Drain-Source Breakdown Voltage	1200 V
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	2.5 V
Type	High Voltage
Fall Time	18 ns
Mounting Style	SMD/SMT
Product	Power MOSFET Modules
Product Category	Discrete Semiconductor Modules
Brand	IXYS
Product Type	Discrete Semiconductor Modules
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	6 A
Rds On - Drain-Source Resistance	2.6 Ohms
RoHS	Y
Configuration	Single
Typical Turn-Off Delay Time	42 ns
Subcategory	Discrete Semiconductor Modules
Typical Turn-On Delay Time	28 ns
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	300 W
Rise Time	33 ns

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