IXTT30N50P
- Manufacturer IXYS
- Part Number IXTT30N50P
- Description MOSFET 30.0 Amps 500 V 0.2 Ohm Rds
- Category MOSFET
Specifications
| Package | TO-268-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Transistor Polarity | N-Channel |
| Width | 14 mm |
| Vgs - Gate-Source Voltage | 30 V |
| Fall Time | 21 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 0.158733 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 27 S |
| Id - Continuous Drain Current | 30 A |
| Length | 16.05 mm |
| Rds On - Drain-Source Resistance | 200 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 75 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | IXTT30N50 |
| Height | 5.1 mm |
| Typical Turn-On Delay Time | 25 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 460 W |
| Rise Time | 27 ns |
| Technology | Si |
Need pricing on IXTT30N50P?
Tell us your quantity and target price. We reply the same business day.