IXTT16N50D2
- Manufacturer IXYS
- Part Number IXTT16N50D2
- Description MOSFET D2 Depletion Mode Power MOSFETs
- Category MOSFET
Specifications
| Package | TO-268-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 199 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 220 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 0.229281 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 7 S |
| Id - Continuous Drain Current | 16 A |
| Rds On - Drain-Source Resistance | 300 mOhms |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 203 ns |
| Subcategory | MOSFETs |
| Channel Mode | Depletion |
| Series | IXTT16N50 |
| Typical Turn-On Delay Time | 50 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 695 W |
| Rise Time | 173 ns |
| Technology | Si |
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