IXTR68P20T
- Manufacturer IXYS
- Part Number IXTR68P20T
- Description MOSFET DISCMSFT PCHAN-TRENCH GATE
- Category MOSFET
Specifications
| Package | PLUS-247-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 380 nC |
| Vgs - Gate-Source Voltage | 15 V |
| Fall Time | 18 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | IXYS |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 P-Channel |
| Id - Continuous Drain Current | 44 A |
| Rds On - Drain-Source Resistance | 64 mOhms |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 115 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Typical Turn-On Delay Time | 63 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 270 W |
| Rise Time | 29 ns |
| Technology | Si |
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