IXTQ200N10T
- Manufacturer IXYS
- Part Number IXTQ200N10T
- Description MOSFET 200 Amps 100V 5.4 Rds
- Category MOSFET
Specifications
| Package | TO-3P-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Width | 4.9 mm |
| Fall Time | 34 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 0.194007 oz |
| Number of Channels | 1 Channel |
| Tradename | HiPerFET |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 200 A |
| Length | 15.8 mm |
| Rds On - Drain-Source Resistance | 5.5 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 45 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | IXTQ200N10 |
| Height | 20.3 mm |
| Typical Turn-On Delay Time | 35 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 550 W |
| Rise Time | 31 ns |
| Technology | Si |
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