IXTP86N20T
- Manufacturer IXYS
- Part Number IXTP86N20T
- Description MOSFET 86 Amps 200V 29 Rds
- Category MOSFET
Specifications
| Package | TO-220-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 5 V |
| Width | 4.83 mm |
| Qg - Gate Charge | 90 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Type | Trench Gate Power MOSFET |
| Fall Time | 29 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 0.081130 oz |
| Tradename | HiPerFET |
| Product Type | MOSFET |
| Maximum Operating Temperature | + 175 C |
| Forward Transconductance - Min | 46 S |
| Id - Continuous Drain Current | 86 A |
| Length | 10.66 mm |
| Rds On - Drain-Source Resistance | 29 mOhms |
| RoHS | Y |
| Typical Turn-Off Delay Time | 52 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | IXTP86N20 |
| Height | 16 mm |
| Typical Turn-On Delay Time | 22 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 480 W |
| Rise Time | 24 ns |
| Technology | Si |
Need pricing on IXTP86N20T?
Tell us your quantity and target price. We reply the same business day.