IXTP80N12T2
- Manufacturer IXYS
- Part Number IXTP80N12T2
- Description MOSFET DISCMSFT NCHTRENCHGATE-GEN2
- Category MOSFET
Specifications
| Package | TO-220AB-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 120 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Vgs - Gate-Source Voltage | 20 V |
| Type | Trench T2 |
| Fall Time | 28 ns |
| Mounting Style | Through Hole |
| Product | Power MOSFET Modules |
| Product Category | MOSFET |
| Brand | IXYS |
| Tradename | TrenchT2 |
| Product Type | MOSFET |
| Maximum Operating Temperature | + 175 C |
| Id - Continuous Drain Current | 80 A |
| Rds On - Drain-Source Resistance | 17 mOhms |
| RoHS | Y |
| Configuration | Single |
| Typical Turn-Off Delay Time | 39 ns |
| Subcategory | MOSFETs |
| Typical Turn-On Delay Time | 21 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 325 W |
| Rise Time | 14 ns |
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