IXTP1N80P
- Manufacturer IXYS
- Part Number IXTP1N80P
- Description MOSFET Polar Power Mosfet 800V 1A
- Category MOSFET
Specifications
| Package | TO-220-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 800 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 9 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 0.081130 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 1 A |
| Rds On - Drain-Source Resistance | 10 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Subcategory | MOSFETs |
| Series | IXTP1N80 |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 42 W |
| Technology | Si |
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