IXTN32P60P
- Manufacturer IXYS
- Part Number IXTN32P60P
- Description MOSFET -32 Amps -600V 0.350 Rds
- Category MOSFET
Specifications
| Package | SOT-227-4 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 196 nC |
| Fall Time | 33 ns |
| Mounting Style | Chassis Mount |
| Product | Power MOSFET |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 1.058219 oz |
| Product Type | MOSFET |
| Maximum Operating Temperature | + 150 C |
| Forward Transconductance - Min | 32 S / 21 S |
| Id - Continuous Drain Current | 32 A |
| Rds On - Drain-Source Resistance | 350 mOhms |
| RoHS | Y |
| Typical Turn-Off Delay Time | 95 ns |
| Subcategory | MOSFETs |
| Series | IXTN32P60 |
| Typical Turn-On Delay Time | 37 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 890 W |
| Rise Time | 27 ns |
| Technology | Si |
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