IXTN200N10L2
- Manufacturer IXYS
- Part Number IXTN200N10L2
- Description MOSFET Linear L2 Pwr MOSFET w/Extended FBSOA
- Category MOSFET
Specifications
| Package | SOT-227-4 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Mounting Style | Chassis Mount |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 1.058219 oz |
| Number of Channels | 1 Channel |
| Product Type | MOSFET |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 90 S/55 S |
| Id - Continuous Drain Current | 178 A |
| Rds On - Drain-Source Resistance | 11 mOhms |
| RoHS | Y |
| Configuration | Single |
| Subcategory | MOSFETs |
| Series | IXTN200N10 |
| Pd - Power Dissipation | 830 W |
| Technology | Si |
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