IXTK600N04T2
- Manufacturer IXYS
- Part Number IXTK600N04T2
- Description MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
- Category MOSFET
Specifications
| Package | TO-264-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.5 V |
| Qg - Gate Charge | 590 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Type | TrenchT2 GigaMOS |
| Fall Time | 250 ns |
| Mounting Style | Through Hole |
| Product | MOSFET Gate Drivers |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 0.352740 oz |
| Number of Channels | 1 Channel |
| Tradename | HiPerFET |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 90 S |
| Id - Continuous Drain Current | 600 A |
| Rds On - Drain-Source Resistance | 1.5 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 90 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | IXTK600N04 |
| Typical Turn-On Delay Time | 40 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.25 kW |
| Rise Time | 20 ns |
| Technology | Si |
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