IXTK170P10P
- Manufacturer IXYS
- Part Number IXTK170P10P
- Description MOSFET -170.0 Amps -100V 0.012 Rds
- Category MOSFET
Specifications
| Package | TO-264-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 240 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Fall Time | 45 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 0.352740 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 P-Channel |
| Forward Transconductance - Min | 35 S |
| Id - Continuous Drain Current | 170 A |
| Rds On - Drain-Source Resistance | 14 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 82 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | IXTK170P10 |
| Typical Turn-On Delay Time | 32 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 890 W |
| Rise Time | 75 ns |
| Technology | Si |
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