IXTJ4N150
- Manufacturer IXYS
- Part Number IXTJ4N150
- Description MOSFET High Voltage Power MOSFET
- Category MOSFET
Specifications
| Package | TO-247-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 1.5 kV |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 5 V |
| Width | 5.21 mm |
| Qg - Gate Charge | 44.5 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Type | High Voltage Power MOSFET |
| Fall Time | 22 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 0.056438 oz |
| Product Type | MOSFET |
| Maximum Operating Temperature | + 150 C |
| Forward Transconductance - Min | 2.8 S |
| Id - Continuous Drain Current | 2.5 A |
| Length | 6.13 mm |
| Rds On - Drain-Source Resistance | 6 Ohms |
| Typical Turn-Off Delay Time | 42 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | IXTJ4N150 |
| Height | 21.34 mm |
| Typical Turn-On Delay Time | 19 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 110 W |
| Rise Time | 23 ns |
| Technology | Si |
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