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IXTH60N25

IXTH60N25

  • Manufacturer IXYS
  • Part Number IXTH60N25
  • Description MOSFET 60 Amps 250V 0.046 Rds
  • Category MOSFET
Specifications
Package TO-247-3
Packaging Tube
Min. Pack 30
Vds - Drain-Source Breakdown Voltage 250 V
Transistor Polarity N-Channel
Width 5.3 mm
Vgs - Gate-Source Voltage 20 V
Fall Time 17 ns
Mounting Style Through Hole
Product Category MOSFET
Brand IXYS
Unit Weight 0.229281 oz
Number of Channels 1 Channel
Configuration Single
Maximum Operating Temperature + 150 C
Transistor Type 1 N-Channel
Id - Continuous Drain Current 60 A
Length 16.26 mm
Rds On - Drain-Source Resistance 46 mOhms
RoHS Y
Product Type MOSFET
Typical Turn-Off Delay Time 60 ns
Subcategory MOSFETs
Channel Mode Enhancement
Series IXTH60N25
Height 21.46 mm
Typical Turn-On Delay Time 23 ns
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 400 W
Rise Time 23 ns
Technology Si

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