IXTH1N200P3
- Manufacturer IXYS
- Part Number IXTH1N200P3
- Description MOSFET 2000V/1A HV Power MOSFET, TO-247
- Category MOSFET
Specifications
| Package | TO-247-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 2 kV |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 23.5 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 80 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 0.056438 oz |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Forward Transconductance - Min | 400 mS |
| Id - Continuous Drain Current | 1 A |
| Rds On - Drain-Source Resistance | 40 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 37 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | Polar3 |
| Typical Turn-On Delay Time | 16 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 125 W |
| Rise Time | 26 ns |
| Technology | Si |
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