IXTH10P60
- Manufacturer IXYS
- Part Number IXTH10P60
- Description MOSFET -10 Amps -600V 1 Rds
- Category MOSFET
Specifications
| Package | TO-247-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Width | 5.3 mm |
| Qg - Gate Charge | 135 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Fall Time | 35 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 0.229281 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 P-Channel |
| Forward Transconductance - Min | 5 S |
| Id - Continuous Drain Current | 10 A |
| Length | 16.26 mm |
| Rds On - Drain-Source Resistance | 1 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 85 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | IXTH10P60 |
| Height | 21.46 mm |
| Typical Turn-On Delay Time | 33 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 300 W |
| Rise Time | 27 ns |
| Technology | Si |
Need pricing on IXTH10P60?
Tell us your quantity and target price. We reply the same business day.