IXTB30N100L
- Manufacturer IXYS
- Part Number IXTB30N100L
- Description MOSFET 30 Amps 1000V
- Category MOSFET
Specifications
| Package | TO-247-3 |
| Packaging | Tube |
| Min. Pack | 25 |
| Vds - Drain-Source Breakdown Voltage | 1 kV |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 5 V |
| Width | 5.31 mm |
| Qg - Gate Charge | 545 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Type | Linear Power MOSFET |
| Fall Time | 78 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 1.340411 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 6 S |
| Id - Continuous Drain Current | 30 A |
| Length | 20.29 mm |
| Rds On - Drain-Source Resistance | 450 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 100 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | IXTB30N100 |
| Height | 26.59 mm |
| Typical Turn-On Delay Time | 36 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 800 W |
| Rise Time | 70 ns |
| Technology | Si |
Need pricing on IXTB30N100L?
Tell us your quantity and target price. We reply the same business day.