IXTA3N100P
- Manufacturer IXYS
- Part Number IXTA3N100P
- Description MOSFET 3 Amps 1000V 4.8 Rds
- Category MOSFET
Specifications
| Package | TO-263-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 1 kV |
| Transistor Polarity | N-Channel |
| Width | 9.65 mm |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 29 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 3 A |
| Length | 10.41 mm |
| Rds On - Drain-Source Resistance | 4.8 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 75 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | IXTA3N100 |
| Height | 4.83 mm |
| Typical Turn-On Delay Time | 22 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 125 W |
| Rise Time | 27 ns |
| Technology | Si |
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