IXTA32P20T
- Manufacturer IXYS
- Part Number IXTA32P20T
- Description MOSFET TenchP Power MOSFET
- Category MOSFET
Specifications
| Package | TO-263-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 180 nC |
| Vgs - Gate-Source Voltage | 15 V |
| Fall Time | 12 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 0.081130 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 P-Channel |
| Forward Transconductance - Min | 18 S |
| Id - Continuous Drain Current | 32 A |
| Rds On - Drain-Source Resistance | 130 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 57 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | IXTA32P20 |
| Typical Turn-On Delay Time | 32 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 300 W |
| Rise Time | 15 ns |
| Technology | Si |
Need pricing on IXTA32P20T?
Tell us your quantity and target price. We reply the same business day.