IXTA1N170DHV
- Manufacturer IXYS
- Part Number IXTA1N170DHV
- Description MOSFET DISC MOSFET N-CH DEPL MODE-STD
- Category MOSFET
Specifications
| Package | TO-263-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 1.7 kV |
| Transistor Polarity | N-Channel |
| Qg - Gate Charge | 47 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 216 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 0.077603 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 570 mS |
| Id - Continuous Drain Current | 1 A |
| Rds On - Drain-Source Resistance | 16 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 130 ns |
| Subcategory | MOSFETs |
| Channel Mode | Depletion |
| Series | Standard |
| Typical Turn-On Delay Time | 46 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 290 W |
| Rise Time | 38 ns |
| Technology | Si |
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