IXTA110N055T7
- Manufacturer IXYS
- Part Number IXTA110N055T7
- Description MOSFET 110 Amps 55V 6.7 Rds
- Category MOSFET
Specifications
| Package | TO-263-7 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 55 V |
| Transistor Polarity | N-Channel |
| Width | 9.4 mm |
| Fall Time | 24 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | IXYS |
| Unit Weight | 0.056438 oz |
| Number of Channels | 1 Channel |
| Tradename | HiPerFET |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 110 A |
| Length | 10.2 mm |
| Rds On - Drain-Source Resistance | 7 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 40 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Height | 4.7 mm |
| Typical Turn-On Delay Time | 20 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 230 W |
| Rise Time | 30 ns |
| Technology | Si |
Need pricing on IXTA110N055T7?
Tell us your quantity and target price. We reply the same business day.