IXTA10P15T
- Manufacturer IXYS
- Part Number IXTA10P15T
- Description MOSFET DISCMSFT PCHAN-TRENCH GATE
- Category MOSFET
Specifications
| Package | TO-263-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 150 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 36 nC |
| Vgs - Gate-Source Voltage | 15 V |
| Fall Time | 12 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | IXYS |
| Number of Channels | 3 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 P-Channel |
| Id - Continuous Drain Current | 10 A |
| Rds On - Drain-Source Resistance | 350 mOhms |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 40 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Typical Turn-On Delay Time | 19 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 83 W |
| Rise Time | 16 ns |
| Technology | Si |
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