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IXTA08N50D2

IXTA08N50D2

  • Manufacturer IXYS
  • Part Number IXTA08N50D2
  • Description MOSFET N-CH MOSFETS (D2) 500V 800MA
  • Category MOSFET
Specifications
Package TO-263-3
Packaging Tube
Min. Pack 1
Vds - Drain-Source Breakdown Voltage 500 V
Transistor Polarity N-Channel
Width 10.41 mm
Qg - Gate Charge 12.7 nC
Vgs - Gate-Source Voltage 20 V
Type Depletion Mode MOSFET
Fall Time 52 ns
Mounting Style SMD/SMT
Product Category MOSFET
Brand IXYS
Unit Weight 0.056438 oz
Number of Channels 1 Channel
Configuration Single
Maximum Operating Temperature + 150 C
Transistor Type 1 N-Channel
Forward Transconductance - Min 340 mS
Id - Continuous Drain Current 800 mA
Length 9.65 mm
Rds On - Drain-Source Resistance 4.6 Ohms
RoHS Y
Product Type MOSFET
Typical Turn-Off Delay Time 35 ns
Subcategory MOSFETs
Series IXTA08N50
Height 4.83 mm
Typical Turn-On Delay Time 28 ns
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 60 W
Rise Time 54 ns
Technology Si

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