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IXGR55N120A3H1

  • Manufacturer IXYS
  • Part Number IXGR55N120A3H1
  • Description IGBT Modules High Frequency Range 40khz C-IGBT w/Diode
  • Category IGBT Modules
Specifications
Package TO-247AD-3
Packaging Tube
Min. Pack 1
Gate-Emitter Leakage Current 100 nA
Collector-Emitter Saturation Voltage 2.2 V
Product Category IGBT Modules
Subcategory IGBTs
Product Type IGBT Modules
Mounting Style Through Hole
Series IXGR55N120
Brand IXYS
Continuous Collector Current at 25 C 70 A
Product IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max 1.2 kV
Unit Weight 0.211644 oz
Maximum Gate Emitter Voltage 20 V
Technology Si
Minimum Operating Temperature - 55 C
Configuration Single
Maximum Operating Temperature + 150 C

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