IXGK120N120A3
- Manufacturer IXYS
- Part Number IXGK120N120A3
- Description IGBT Transistors 120 Amps 1200V
- Category IGBT Transistors
Specifications
| Package | TO-264-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | 400 nA |
| Continuous Collector Current Ic Max | 600 A |
| Width | 5.31 mm |
| Mounting Style | Through Hole |
| Continuous Collector Current at 25 C | 240 A |
| Product Category | IGBT Transistors |
| Brand | IXYS |
| Unit Weight | 0.352740 oz |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Tradename | GenX3 |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Operating Temperature Range | - 55 C to + 150 C |
| Length | 20.29 mm |
| Maximum Gate Emitter Voltage | 20 V |
| RoHS | Y |
| Continuous Collector Current | 240 A |
| Collector-Emitter Saturation Voltage | 1.85 V |
| Product Type | IGBT Transistors |
| Subcategory | IGBTs |
| Series | IXGK120N120 |
| Height | 26.59 mm |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 830 W |
| Technology | Si |
Need pricing on IXGK120N120A3?
Tell us your quantity and target price. We reply the same business day.