IXGH56N60B3
- Manufacturer IXYS
- Part Number IXGH56N60B3
- Description IGBT Transistors DISC IGBT PT-MID FREQUENCY
- Category IGBT Transistors
Specifications
| Package | TO-247-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Collector-Emitter Saturation Voltage | 1.49 V |
| Product Category | IGBT Transistors |
| Subcategory | IGBTs |
| Gate-Emitter Leakage Current | 100 nA |
| Continuous Collector Current Ic Max | 350 A |
| Maximum Operating Temperature | + 150 C |
| Brand | IXYS |
| Pd - Power Dissipation | 330 W |
| Continuous Collector Current at 25 C | 130 A |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Mounting Style | Through Hole |
| Maximum Gate Emitter Voltage | 20 V |
| Product Type | IGBT Transistors |
| Minimum Operating Temperature | - 55 C |
| Configuration | Single |
| Technology | Si |
Need pricing on IXGH56N60B3?
Tell us your quantity and target price. We reply the same business day.