IXGH40N120B2D1
- Manufacturer IXYS
- Part Number IXGH40N120B2D1
- Description IGBT Transistors IGBT, Diode 1200V, 75A
- Category IGBT Transistors
Specifications
| Package | TO-247AD-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | 100 nA |
| Continuous Collector Current Ic Max | 200 A |
| Width | 5.3 mm |
| Mounting Style | Through Hole |
| Continuous Collector Current at 25 C | 75 A |
| Product Category | IGBT Transistors |
| Brand | IXYS |
| Unit Weight | 0.229281 oz |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Operating Temperature Range | - 55 C to + 150 C |
| Length | 16.26 mm |
| Maximum Gate Emitter Voltage | 20 V |
| RoHS | Y |
| Continuous Collector Current | 75 A |
| Collector-Emitter Saturation Voltage | 2.9 V |
| Product Type | IGBT Transistors |
| Subcategory | IGBTs |
| Series | IXGH40N120 |
| Height | 21.46 mm |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 380 W |
| Technology | Si |
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