IXGB200N60B3
- Manufacturer IXYS
- Part Number IXGB200N60B3
- Description IGBT Transistors GenX3 600V IGBT
- Category IGBT Transistors
Specifications
| Package | PLUS 264-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | 100 nA |
| Continuous Collector Current Ic Max | 600 A |
| Width | 5.21 mm |
| Mounting Style | Through Hole |
| Continuous Collector Current at 25 C | 75 A |
| Product Category | IGBT Transistors |
| Brand | IXYS |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Tradename | GenX3 |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Operating Temperature Range | - 55 C to + 150 C |
| Length | 20.29 mm |
| Maximum Gate Emitter Voltage | 20 V |
| RoHS | Y |
| Continuous Collector Current | 75 A |
| Collector-Emitter Saturation Voltage | 1.35 V |
| Product Type | IGBT Transistors |
| Subcategory | IGBTs |
| Series | IXGB200N60 |
| Height | 26.42 mm |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.25 kW |
| Technology | Si |
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