IXFX21N100F
- Manufacturer IXYS
- Part Number IXFX21N100F
- Description RF MOSFET Transistors IXFX21N100F F-Class HiPerRF Capable MOSFET IXFX21N100F IXYS
- Category RF MOSFET Transistors
Specifications
| Package | TO-247-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 1000 V |
| Transistor Polarity | N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Width | 5.21 mm |
| Qg - Gate Charge | 160 nC |
| Fall Time | 15 ns |
| Mounting Style | Through Hole |
| Product Category | RF MOSFET Transistors |
| Brand | IXYS |
| Unit Weight | 0.158733 oz |
| Number of Channels | 1 Channel |
| Configuration | 1 N-Channel |
| Maximum Operating Temperature | + 150 C |
| Forward Transconductance - Min | 15 S |
| Id - Continuous Drain Current | 21 A |
| Length | 16.13 mm |
| Rds On - Drain-Source Resistance | 500 mOhms |
| RoHS | Y |
| Product Type | RF MOSFET Transistors |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Height | 21.34 mm |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 500 W |
| Rise Time | 16 ns |
| Technology | Si |
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