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IXFT86N30T

IXFT86N30T

  • Manufacturer IXYS
  • Part Number IXFT86N30T
  • Description MOSFET TRENCH HIPERFET PWR MOSFET 300V 86A
  • Category MOSFET
Specifications
Package TO-268-3
Packaging Tube
Min. Pack 1
Vds - Drain-Source Breakdown Voltage 300 V
Transistor Polarity N-Channel
Vgs th - Gate-Source Threshold Voltage 5 V
Width 14 mm
Qg - Gate Charge 180 nC
Vgs - Gate-Source Voltage 20 V
Type Trench HiperFET Power MOSFET
Fall Time 54 ns
Mounting Style SMD/SMT
Product Category MOSFET
Brand IXYS
Unit Weight 0.158733 oz
Tradename HiPerFET
Product Type MOSFET
Maximum Operating Temperature + 150 C
Forward Transconductance - Min 70 S
Id - Continuous Drain Current 86 A
Length 16.05 mm
Rds On - Drain-Source Resistance 43 mOhms
RoHS Y
Typical Turn-Off Delay Time 54 ns
Subcategory MOSFETs
Channel Mode Enhancement
Series IXFT86N30
Height 5.1 mm
Typical Turn-On Delay Time 16 ns
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 830 W
Rise Time 18 ns
Technology Si

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